FDMS6681Z datasheet, mosfet equivalent, ON Semiconductor

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FDMS6681Z Features and benefits

* Max rDS(on) = 3.2 mW at VGS = −10 V, ID = −21.1 A
* Max rDS(on) = 5.0 mW at VGS = −4.5 V, ID = −15.7 A
* Advanced Package and Silicon Combination for Low rD.

FDMS6681Z Application

Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection.

FDMS6681Z Description

The FDMS6681Z has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection. Features
* Max rDS(on) = 3.2 mW at VGS = −10 .

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